APTLGL325A1208G APTLGL325A1208G C rev 1 october, 2012 www.microsemi.com 1-7 out 0/vbus vbus gnd vdd gnd inl vdd inh these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com v ces = 1200v i c = 325a @ tc = 80c phase leg intelligent power module application ? motor control ? uninterruptible power supplies ? switched mode power supplies ? amplifier features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - rbsoa and scsoa rated ? integrated fail safe igbt protection (driver ) - top bottom input signals interlock - isolated dc/dc converter ? low stray inductance ? m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? very high noise immunity (common mode rejection > 25kv/s) ? galvanic isolation: 3750v for the optocoupler 2500v for the transformer ? 5v logic level with schmitt-trigger input ? single v dd =5v supply required ? secondary auxiliary power supplies internally generated (15v, -6v) ? optocoupler qualified to aec-q100 test guidelines ? rohs compliant downloaded from: http:///
APTLGL325A1208G APTLGL325A1208G C rev 1 october, 2012 www.microsemi.com 2-7 all ratings @ t j = 25c unless otherwise specified 1. inverter power module absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 420 i c continuous collector current t c = 80c 325 i cm pulsed collector current t c = 25c 600 a p d maximum power dissipation t c = 25c 1500 w rbsoa reverse bias safe operating area t j = 150c 600a @ 1150v electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 500 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 150c 750 a t j = 25c 1.85 2.2 v ce(sat) collector emitter saturation voltage v dd = v in = 5v i c = 300a t j = 150c 2.2 v dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 17.6 c oes output capacitance 1.16 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.94 nf t r rise time 30 t f fall time inductive switching (25c) v dd = v in = 5v v bus = 600v ; i c = 300a 70 ns t r rise time 40 t f fall time 80 ns e on turn-on switching energy 34 e off turn-off switching energy inductive switching (150c) v dd = v in = 5v v bus = 600v i c = 300a 29 mj i sc short circuit data v dd = v in = 5v; v bus =900v t p 10s ; t j = 150c 1100 a r thjc junction to case thermal resistance 0.1 c/w downloaded from: http:///
APTLGL325A1208G APTLGL325A1208G C rev 1 october, 2012 www.microsemi.com 3-7 reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 150c 750 a i f dc forward current tc = 80c 360 a t j = 25c 1.7 2.2 v f diode forward voltage i f = 300a t j = 150c 1.65 v t j = 25c 155 t rr reverse recovery time t j = 150c 300 ns t j = 25c 29 q rr reverse recovery charge t j = 150c 61 c t j = 25c 10.4 e rr reverse recovery energy i f = 300a v r = 600v di/dt =7000a/s t j = 150c 22 mj r thjc junction to case thermal resistance 0.17 c/w 2. driver absolute maximum ratings symbol parameter max ratings unit v dd supply voltage 5.5 v ini input signal voltage i=l, h 5.5 v v ini = 0v, i =l & h 0.35 i vddmax maximum supply current v dd =5v, v inh = /v inl ; f out = 55khz 2 a f max maximum switching frequency 55 khz driver electrical characteristics symbol characteristic test conditions min typ max unit v dd operating supply voltage 4.5 5 5.5 v v ini(max) maximum input voltage -0.5 5 5.5 v ini (th+) positive going threshold voltage 3.2 v ini(th-) negative going threshold voltage 1 v r ini input resistance * i = l, h 1 k ? t d(on) turn on delay time driver + igbt 1100 ? d t built in dead time 600 t d(off) turn off delay time driver + igbt 750 ns pwd pulse width distortion 300 pdd propagation delay difference between any two driver t d(on) - t d(off) -350 350 ns v isol primary to secondary isolation 2500 v rms * low impedance guarantees good noise immunity. ? including built in dead time. downloaded from: http:///
APTLGL325A1208G APTLGL325A1208G C rev 1 october, 2012 www.microsemi.com 4-7 3. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t op operating ambient temperature -40 85 t stg storage temperature range -40 100 t c operating case temperature -40 100 c to heatsink m5 2 4.7 torque mounting torque for terminals m5 2 4 n.m wt package weight 550 g 4. lp8 package outline (dimensions in mm) downloaded from: http:///
APTLGL325A1208G APTLGL325A1208G C rev 1 october, 2012 www.microsemi.com 5-7 typical igbt performance curve output characteristics t j =25c t j =150c 0 100 200 300 400 500 600 01234 v ce (v) i c (a) v dd = 5v v in = 5v energy losses vs collector current eon eoff 0 16 32 48 64 80 0 100 200 300 400 500 600 i c (a) e (mj) v ce = 600v v in = 5v v dd = 5v t j = 150c reverse bias safe operating area 0 160 320 480 640 0 300 600 900 1200 v ce (v) i c (a) t j =150c maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) hard switching 0 10 20 30 40 50 60 0 100 200 300 400 500 i c (a) fmax, operating frequency (khz) v ce =600v d=50% v dd =5v v in = 5v t j =150c tc=75c operating frequency vs collector current limited by internal gate drive power dissipation downloaded from: http:///
APTLGL325A1208G APTLGL325A1208G C rev 1 october, 2012 www.microsemi.com 6-7 typical diode performance curve forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 500 600 00 . 511 . 522 . 5 v f , anode to cathode voltage (v) i f , forward current (a) maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) energy losses vs collector current 0 8 16 24 32 0 100 200 300 400 500 600 i f (a) err (mj) v r = 600v t j = 150c downloaded from: http:///
APTLGL325A1208G APTLGL325A1208G C rev 1 october, 2012 www.microsemi.com 7-7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microse mi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaim s any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damage s and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
|
